Proceedings of the Korean Society of Precision Engineering Conference (한국정밀공학회:학술대회논문집)
- 2005.10a
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- Pages.268-271
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- 2005
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- 2005-8446(pISSN)
Etch Resistance of Mask Layer modified by AFM-based Tribo-Nanolithography in Aqueous Solution
AFM 기반 액중 Tribo nanolithography 에서의 마스크 층 내식각성에 관한 연구
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Park Jeong-Woo
(ERC/NSDM, PNU) ;
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Lee Deug-Woo
(School of Nano Science and Technology, PNU) ;
- Kawasegi Noritaka (Toyama University) ;
- Morita Noboru (Toyama University)
- Published : 2005.10.01
Abstract
Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.