• Title/Summary/Keyword: Mastless lithography

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A Study of Mastless Pattern Fabrication using Stereolithography (광조형을 이용한 마스크리스 패턴형성에 관한 연구)

  • 정영대;조인호;손재혁;임용관;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.05a
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    • pp.503-507
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    • 2002
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

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Fabrication Technique of Nano/Micro Pattern with Concave and Convex Structures on the Borosilicate Surface by Using Nanoscratch and HF etching (나노스크래치와 HF 식각을 병용한 보로실리케이트 요/철형 구조체 패턴 제작 기술)

  • 윤성원;강충길
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.4
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    • pp.24-31
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    • 2004
  • The objective of this work is to suggest a mastless pattern fabrication technique using the combination of machining by Nanoindenter(equation omitted) XP and HF wet etching. Sample line patterns were machined on a borosilicate surface by constant load scratch (CLS) of the Nanoindenter(equation omitted) XP with a Berkovich diamond tip, and they were etched in HF solution to investigate chemical characteristics of the machined borosilicate surface. All morphological data of scratch traces were scanned using atomic force microscope (AFM).

Maskless Fabrication of the Silicon Stamper for PDMS Nano/Micro Channel (나노/마이크로 PDMS 채널 제작을 위한 마스크리스 실리콘 스템퍼 제작 및 레오로지 성형으로의 응용)

  • 윤성원;강충길
    • Transactions of Materials Processing
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    • v.13 no.4
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    • pp.326-333
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    • 2004
  • The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

Etch Resistance of Mask Layer modified by AFM-based Tribo-Nanolithography in Aqueous Solution (AFM 기반 액중 Tribo nanolithography 에서의 마스크 층 내식각성에 관한 연구)

  • Park Jeong-Woo;Lee Deug-Woo;Kawasegi Noritaka;Morita Noboru
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.268-271
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    • 2005
  • Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

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A Study on the Polymer Lithography using Stereolithography (광조형법을 이용한 고분자 리소그래피에 관한 연구)

  • Jung Young Dae;Lee Hyun Seop;Son Jae Hyuk;Cho In Ho;Jeong Hae Do
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.1
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    • pp.199-206
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    • 2005
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

Maskless Pattern Fabrication on Si (100) Surface by Using Nano Indenter with KOH Wet Etching (나노인덴터와 KOH 습식 식각 기술을 병용한 Si(100) 표면의 마스크리스 패턴 제작 기술)

  • 윤성원;신용래;강충길
    • Transactions of Materials Processing
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    • v.12 no.7
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    • pp.640-646
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    • 2003
  • The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).