Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.84-85
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- 2005
A study on the Dislocation-Free Shallow Trench Isolation (STI) Process
Dislocation-Free Shallow Trench Isolation 공정 연구
- Yoo, Hae-Young (Chung-Ang University) ;
- Kim, Nam-Hoon (Chosun University) ;
- Kim, Sang-Yong (DongbuAnam Semiconductor Inc.) ;
- Lee, Woo-Sun (Chosun University) ;
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Chang, Eui-Goo
(Chung-Ang University)
- Published : 2005.11.10
Abstract
Dislocations are often found at Shallow Trench Isolation (STI) process after repeated thermal cycles. The residual stress after STI process often leads defect like dislocation by post STI thermo-mechanical stress. Thermo-mechanical stress induced by STI process is difficult to remove perfectly by plastic deformation at previous thermal cycles. Embedded flash memory process is very weak in terms of post STI thermo-mechanical stress, because it requires more oxidation steps than other devices. Therefore, dislocation-free flash process should be optimized.
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