한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)
- 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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- Pages.151-154
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- 2005
Resistance Switching Enhancement in Multi-step Deposition by Multi-deposition and Multi-anneal
- Kim KyongRae (Division of Information Display Engineering, Hanyang University) ;
- Ko Han-kyoung (Division of Advanced Materials Science & Engineering, Hanyang University) ;
- Lee Taeho (Division of Advanced Materials Science & Engineering, Hanyang University) ;
- Park In-Sung (Information Display Research Institute, Hanyang University) ;
- Ahn Jinho (Division of Advanced Materials Science & Engineering, Hanyang University, Information Display Research Institute, Hanyang University)
- 발행 : 2005.09.01
초록
In this paper, we present the enhanced performance of resistive RAM devices with multi-step deposited and annealed oxides. By using multi-step deposition and low temperature multi-step annealins, forming-free Re-RAM is achieved with lower operation voltages and larger resistive ratio than those of conventional Re-RAM with typical single deposited oxide.
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