Device Physics of Low Temperature Poly-Si and Single Grain TFTs

  • Migliorato, P. (Cambridge University Engineering Department) ;
  • Yan, F. (Cambridge University Engineering Department) ;
  • Mo, Y. (Cambridge University Engineering Department) ;
  • Hong, Y. (Cambridge University Engineering Department) ;
  • Ishihara, R. (Delft University of Technology)
  • Published : 2004.08.23

Abstract

Static and transient behaviour of Low Temperature Poly-Si TFTs (LTPS-TFTs) and Single Grain TFTs (SG- TFTs) are compared 3-D simulation is applied here for the first time to TFTs to account for the structure and twin boundaries in SG-TFTs.

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