Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The design and fabrication of SOI photodiode arrays in SSR(Solid State Relay) chip

SSR(Solid State Relay)용 SOI Photodiode Array 설계 및 제작

  • Shin Su Ho (dept. of electronic engineering of Sogang univ.) ;
  • Zo Hee Hyub (dept. of electronic engineering of Sogang univ.) ;
  • Koo Yong Seo (dept. of electronic engineering of Seokeong univ.) ;
  • An Chul (dept. of electronic engineering of Sogang univ.)
  • Published : 2004.06.01
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Abstract

This paper proposed a new solid State Relay(SSR) structure that can replace the conventional SSR as a power IC. The photodiode arrays, the main part of this structure, were designed and integrated in the same power It chip with the output parts, LDMOSFET and BJT, on a SOI substrate. The fabrication of this input part shared the same output LDMOSFET fabrication processs, except the additional deposition of Silicon nitride($Si_3N_4$) for the photo-detection part. According to LED illumination intensites and photo detecting areas, we could obtain voltage of 0.49V ${\~}$0.52V and current of 5.5uA ${\~}$ 108uA respectively from the fabricated unit photodiode. The maximum value of the voltage and the current we could obtain from the photodiode array were 3.58V and 24.4uA respectively, and the voltage was enough to operate the output LDMOSFET

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