Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.06b
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- Pages.505-508
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- 2004
Gate Length Dependence of Intrinsic Equivalent Circuit Parameters for RF CMOS Devices
RF CMOS 소자 내부 등가회로 파라미터의 게이트길이에 대한 종속성
- Choi, Mun-Sung (Hankuk University of Foreign Studies) ;
- Lee, Yong-Taek (Hankuk University of Foreign Studies) ;
- Lee, Seong-Hearn (Hankuk University of Foreign Studies)
- Published : 2004.06.01
Abstract
Gate length dependent data of intrinsic MOSFET equivalent circuit parameters are extracted using a direct extraction technique based on simple 2-port parameter equations. The relatively scalable data with respect to gate length are obtained. These data are verified to be acrurate by observing good correspondence between modeled and measured S-parameters up to 30GHz. These data will be helpful to construct RF scalable MOSFET model.
Keywords