한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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- Pages.37-40
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- 2003
입도 분석을 통한 CMP 슬러리 에이징 효과
CMP slurry aging effect by Particle Size analysis
- Shin, Jae-Wook (Dep. of Electrical Engineering of Chosun Uni) ;
- Lee, Woo-Sun (Dep. of Electrical Engineering of Chosun Uni) ;
- Choi, Kwon-Woo (Dep. of Electrical Engineering of Chosun Uni) ;
- Ko, Pil-Ju (Dep. of Electrical Engineering of Chosun Uni) ;
- Seo, Yong-Jin (Dep. of Electrical Engineering of Daebul Uni.)
- 발행 : 2003.05.16
초록
As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.