한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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- Pages.41-44
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- 2003
슬러리의 조성에 따른 산화막 CMP 연마율과 균일도 특성
Oxide CMP Removal Rate and Non-uniformity as a function of Slurry Composition
- Ko, Pi-Ju (Dep. of Electrical Engineering of Chosun Univ.) ;
- Lee, Woo-Sun (Dep. of Electrical Engineering of Chosun Univ.) ;
- Choi, Kwon-Woo (Dep. of Electrical Engineering of Chosun Univ.) ;
- Shin, Jae-Wook (Dep. of Electrical Engineering of Chosun Univ.) ;
- Seo, Yong-Jin (Dep. of Electrical and Electronic Engineering of Daebul Univ.)
- 발행 : 2003.05.16
초록
As the device feature size is reduced to the deep sub-micron regime, the chemical mechanical polishing (CMP) technology is widely recognized as the most promising method to achieve the global planarization of the multilevel interconnection for ULSI applications. However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.