한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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- Pages.880-883
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- 2003
FBAR용 $ZnO/AZO/SiO_2/Si$ 박막의 결정학적 특성에 관한 연구
Crystallography properties of $ZnO/AZO/SiO_2/Si$ thin film for FBAR
- Kang, Tai-Young (Gyeongwon Univ.) ;
- Keum, Min-Jong (Gyeongwon Univ.) ;
- Son, In-Hwan (Shinsung College) ;
- Kim, Kyung-Hwan (Gyeongwon Univ.)
- 발행 : 2003.07.10
초록
ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on