Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07b
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- Pages.811-813
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- 2003
A Study on the Negative Differential Resistance Properties of Self-Assembly Organic Thin Film with Nitro Group
니트로기를 가진 자기조립된 유기 초박막의 부성미분저항 특성에 관한 연구
- Kim, Seung-Un (Dong-A University Department of Electrical Engineering) ;
- Son, Jung-Ho (Dong-A University Department of Electrical Engineering) ;
- Kim, Byoung-Sang (Dong-A University Department of Electrical Engineering) ;
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Shin, Hoon-Kyu
(Dong-A University Department of Electrical Engineering) ;
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Kwon, Young-Soo
(Dong-A University Department of Electrical Engineering)
- Published : 2003.07.10
Abstract
We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).
Keywords
- Self-Assembly Monolayers(SAMs);
- Negative Differential Resistance(NDR);
- Scanning Tunneling Microscopy(STM);
- Resonant Tunneling Diode(RTD)