Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
- /
- Pages.46-49
- /
- 2003
W Chemical Mechanical Polishing (CMP) Characteristics by oxidizer addition
산화제 첨가에 따른 W-CMP 특성
- Park, Chang-Jun (Daebul Uni.) ;
- Seo, Yong-Jin (Daebul Uni.) ;
- Lee, Kyoung-Jin (Daebul Uni.) ;
- Jeong, So-Young (Daebul Uni.) ;
- Kim, Chul-Bok (Dongsung A&T) ;
- Kim, Sang-Yong (Dongbu Anam Fab.) ;
- Lee, Woo-Sun (Chosun Uni.)
- 박창준 (대불대학교 전기공학과) ;
- 서용진 (대불대학교 전기공학과) ;
- 이경진 (대불대학교 전기공학과) ;
- 정소영 (대불대학교 전기공학과) ;
- 김철복 (동성 A&T) ;
- 김상용 (동부아남 Fab) ;
- 이우선 (조선대학교 전기공학과)
- Published : 2003.07.10
Abstract
Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as
Keywords
- Chemical mechanical polishing (CMP);
- slurry;
- oxidizer;
- abrasive;
- removal rate (RR);
- non-uniformity (NU)