Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.41-45
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- 2003
A study on GaN thin film and GaN nanowire doped with neutron-transmuted isotopes
중성자를 이용한 GaN박막과 GaN 나노와이어의 핵전환 도핑
- Kang, Myung-Il (Department of Electrical Engineering Korea University) ;
- Kim, Hyun-Suk (Department of Electrical Engineering Korea University) ;
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Lee, Jong-Soo
(Department of Electrical Engineering Korea University)
;
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Kim, Sang-Sig
(Department of Electrical Engineering Korea University)
;
- Han, Hyon-Soo (Korea Atomic Energy Research Institute)
- Published : 2003.07.10
Abstract
Impurities transmuted in GaN thin film and GaN nanowires after neutron irradiation are studied in this work. The structural properties of GaN nanowires were shown using by Transmission Electron Microscope(TEM). Transmuted impurities that are expected to be doped into GaN thin film and GaN nanowires are then confirmed by photoluminescence(PL). Transmuted atom in GaN materials is Ge atom, Ge-related peaks in GaN thin film lead to emit at 2.9eV, 2.25eV. But emission bands at 2.9eV, 2.25eV are not shown in PL spectra of GaN nanowires. Our experimental results are expected to give deep impact on nano-material doping technology for the achievement of the fabrication of nano-devices.