Extracting the Effective Channel Length of MOSFET by Capacitance - Voltage Method.

Capacitance - Voltage 방법을 이용한 MOSFET의 유효 채널 길이 추출

Improvement in MOS fabrication technology have led to high-density high-performance integrated circuits with MOSFET channel lengths in the sub-micron range. For devices of the size, transistor characteristics become highly sensitive to effective channel length. We propose a new approach to extract the effective channel length of MOSFET by Capacitance-Voltage (C-V) method. Gate-to-Source, Drain capacitance ( $C_{gsd}$) are measured and the effective channel length can be extracted. In addition, compared to l/$\beta$ method and Terada method, which has been point out that it fails to extract the accurate effective channel length of the devices, we prove that our approach still works well for the devices with down to sub-micron regime.e.