Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Reliability of TRENCH GATE POWER MOSFET

TRENCH GATE POWER MOSFET의 신뢰성 분석 연구

  • Hwang, Joon-Sun (Dept. of Electronic Engineering, Sogang University) ;
  • Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University) ;
  • Kim, Sang-Ki (ETRI-Electronics and Telecommunications Research Institute) ;
  • An, Chul (Dept. of Electronic Engineering, Sogang University)
  • 황준선 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 김상기 (한국전자통신연구원) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2003.07.01
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Abstract

In this paper, we have investigated electrical characteristics of TRENCH GATE POWER MOSFET in the temperature range of 300K to 500K. The results of this study indicate that on-resistance and breakdown voltage increase with the temperature ,but drain current, threshold voltage and transconductance decrease with the temperature. Especially, it is observed that electrical characteristics are improved as numerical unit cells are increased.

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