Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

2002.11a
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Pages.452-455
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2002

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)

권호 표지

Crystal Characteristics of 3C-SiC Thin-films Grown on 2 inch Si(100) wafer

2 inch Si(100)기판위에 성장된 3C-SiC 박막의 결정특성

Chung, Su-Young (Dongseo Univ.) ;
Chung, Yun-Sik (Pukyong National Univ.) ;
Ryu, Ji-Goo (Pukyong National Univ.) ;
Chung, Gwiy-Sang (Dongseo Univ.) ;
Shigehiro, Nishino (Kyoto Institute of Technology)

정수용 (동서대학교) ;
정연식 (부경대학교) ;
류지구 (부경대학교) ;
정귀상 (동서대학교) ;

Published : 2002.11.07

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Abstract

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

Keywords