한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

CMOS 소자를 위한 NiSi의 surface damage 의존성

The dependence of NiSi for CMOS Technology on Surface Damage

  • 지희환 (충남대학교 전자공학과) ;
  • 배미숙 (충남대학교 전자공학과) ;
  • 이헌진 (충남대학교 전자공학과) ;
  • 오순영 (충남대학교 전자공학과) ;
  • 윤장근 (충남대학교 전자공학과) ;
  • 박성형 (Hynix semiconductor Inc., System IC 연구소) ;
  • 왕진석 (충남대학교 전자공학과)
  • Ji, Hee-Hwan (Chungnam National University Dept. of Electronics Eng.) ;
  • Bae, Mi-Suk (Chungnam National University Dept. of Electronics Eng.) ;
  • Lee, Hun-Jin (Chungnam National University Dept. of Electronics Eng.) ;
  • Oh, Soon-Young (Chungnam National University Dept. of Electronics Eng.) ;
  • Yun, Jang-Gn (Chungnam National University Dept. of Electronics Eng.) ;
  • Park, Sung-Hyung (Hynix Semiconductor Inc., System IC Research Center) ;
  • Wang, Jin-Suk (Chungnam National University Dept. of Electronics Eng.)
  • 발행 : 2002.11.07
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초록

The influence of Si surface damage on Ni-silicide with TiN Capping layer and the effect of $H_2$ anneal are characterized. Si surface is intentionally damaged using Ar Sputtering. The sheet resistance of NiSi formed on damaged silicon increased rapidly as Ar sputtering time increased. However, the thermal stability of Ni-Si on the damage silicon was more stable than that on at undamaged Si, which means that damaged region retards the formation of NiSi. It was shown that $H_2$ anneal and TiN capping is highly effective in reducing NiSi sheet resistance.

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