한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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- Pages.735-738
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- 2002
HMDS 가스원을 이용한 3C-SiC의 결정성장
Crystal Growth of 3C-SiC Using HMDS Gas Source
- Sun, Ju-Hun ;
- Chung, Yun-Sik ;
- Chung, Gwiy-Sang ;
- Nishino, Shigehiro (Dpt of Electro. & Infor. Sci., Kyoto Institute of Technology)
- 발행 : 2002.07.08
초록
Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of