0-25 $\mu\textrm{m}$ gate Double-heterostructure AIGaAs/GaAs PHEMT의 성능향상을 위한 디지털 리세스에 대한 연구

Digital recess etching for advanced performance of 0.25$\mu\textrm{m}$­ Double-heterostructure AIGaAs/GaAs PHEMT

  • 발행 : 2002.06.01

초록

A double-heterostructure AIGaAs/GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) using digital recess has been successfully realized. Futhermore, the differences of gm,nax, fT, fmax between two samples are as low as 0.62%, 1.58% and 2.56 % respectively. Experimental results are presented demonstrating the etch rate and Process invariability with respect to hydrogen peroxide and acid exposure times with uniformity among devices on a sample.

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