AttPSM metal layer 리토그라피공정의 side-lobe억제를 위한 Rule-based OPC

Rule-based OPC for Side-lobe Suppression in The AttPSM Metal Layer Lithography Process

As the mask design rules get smaller, the probability of the process failure becomes higher doc to the narrow overlay margin between the contact and metal interconnect layers. To obtain the minimum process margin, a tabbing and cutting method Is applied with the rule based optical\ulcorner proximity correction to the metal layer, so that the protection to bridge problems caused by the insufficient space margin between the metal layers can be accomplished. The side-lobe phenomenon from the attenuated phase shift mask with the tight design rule is analyzed through the aerial image simulation for test patterns with variation of the process parameters such as numerical aperture, transmission rate, and partial coherence. The corrected patterns are finally generated by the rules extracted from the side-lobe simulation.