Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.832-835
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- 2001
Investigation of $WSi_2$ Gate for the Integration With $HfO_3$ gate oxide for MOS Devices
MOS 소자를 위한 $HfO_3$ 게이트 절연체와 $WSi_2$ 게이트의 집적화 연구
Abstract
We report the structural and electrical properties of hafnium oxide (HfO