한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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이온빔 스퍼터링법에 의한 ATO박막의 저온 증착 특성

Low Temperature Deposition and Characteristics of ATO Thin Films by Ion Beam Sputtering

  • 구창영 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부) ;
  • 홍민기 (한국표준과학연구원 표면분석그룹) ;
  • 김경중 (한국표준과학연구원 표면분석그룹) ;
  • 김광호 (부산대학교 무기재료공학과)
  • Koo, Chang-Young (Department of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Hee-Young (Department of Materials Science and Engineering, Yeungnam University) ;
  • Hong, Min-Ki (Surface Analysis Group, Korea Research Institute of Standards and Science (KRISS)) ;
  • Kim, Kyung-Joong (Surface Analysis Group, Korea Research Institute of Standards and Science (KRISS)) ;
  • Kim, Kwang-Ho (Department of Inorganic Materials Engineering, Pusan National University)
  • 발행 : 2000.05.13
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초록

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

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