한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

PLD로 증착한 ZnO 박막의 후열처리 효과 연구

Effect of post-annealing treatment on the properties of ZnO thin films grown by PLD

  • 배상혁 (연세대학교 전기컴퓨터 공학과) ;
  • 이상렬 (연세대학교 전기컴퓨터 공학과)
  • 발행 : 2000.04.22
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

키워드