Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.04b
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- Pages.31-34
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- 2000
Influence of D.I. Water Pressure and Purified $N_2$ Gas on the Inter Level Dielectric-Chemical Mechanical Polishing Process
탈이온수의 압력과 정제된 $N_2$ 가스가 ILD-CMP 공정에 미치는 영향
- Published : 2000.04.28
Abstract
It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified
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