Proceedings of the KSME Conference (대한기계학회:학술대회논문집)

The Korean Society of Mechanical Engineers (대한기계학회)
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Numerical Analysis of Silicon Deposition in CVD Reactor

화학기상 성장법에 의한 실리콘 부착에 관한 수치해석

  • 김인 (전북대학교 대학원 정밀기계공학과) ;
  • 백병준 (전북대학교 기계공학부) ;
  • 윤정모 (전북대학교 신소재공학부) ;
  • 이철로 (전북대학교 신소재공학부)
  • Published : 2000.11.02
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Abstract

The fluid flow, heat transfer and the local mass fi-action of chemical species in the chemical vapor deposition(CVD) manufacturing process are numerically studied. The deposition of silicon from dilute silane is hydrogen carrier gas in a horizontal CVD reactor is investigated. The effect of inlet carrier gas velocity, mass fraction of silane, susceptor angle on the deposition thickness and uniformity was represented.

Keywords