Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.11a
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- Pages.355-358
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- 2000
Magnetoresistance changes of sputtered NiFe thin films with deposition temperatures
NiFe 박막의 증착온도에 따른 MR 특성
Abstract
Magnetoresistance changes of NiFe thin films were investigated as a function of deposition temperature. DC magnetron sputtering was employed to fabricate Ta/NiFe(t)/Ta thin films on Si(001) substrates with in-situ field or with no-field. The thickness(t) of NiFe films was a range of 4 to 15nm. Substrate temperature was a range of 30 to 400
Keywords
- NiFe;
- Angular Magnetoresistance;
- MR;
- Substrate Temperature;
- Thickness dependence;
- Magnetic Anisotropy.