한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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- Pages.489-492
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- 1999
P-채널 poly-Si TFT's의 Alternate Bias 스트레스 효과
Effect of Alternate Bias Stress on p-channel poly-Si TFT's
초록
The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO
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