한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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- Pages.485-488
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- 1999
초 박막 SOI MOSFET's 의 Back-Gate Bias 효과
Back-Gate Bias Effect of Ultra Thin Film SOI MOSFET's
초록
In this paper, the effects of back-gate bias on n-channel SOI MOSFETs has been systematically investigated. Back-gate surface is accumulated when negative bias is applied. It is found that the driving current ability of SOI MOSFETs is reduced because the threshold voltage and subthreshold slope are increased and transconductance is decreased due to the hole accumulation in Si body.
키워드