한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1999년도 추계학술대회 논문집
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- Pages.445-448
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- 1999
온도 변화에 따른 GaAs MESFET의 정전용량에 대한 연구
Capacitance Characteristics of GaAs MESFET will Temperatures
초록
In this Paper, we present simple physical model of the Capacitance characteristics for GaAs MESFET\`s in wide temperatures. In this model, gate-source and gate-drain capacitances are represented by analytical expressions which are classified into three different regions for bias voltage. This model contained the temperature dependent variable that is the built-in voltage and the depletion width. Using the equations obtained in this work a submicron gate length MESFET has simulated and theoretical result are in good agreement with the experimental measurement.