한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

니켈 폴리사이드 게이트의 전기적 특성

Electrical Properties of Nickel Polycide Gate

  • 정연실 (수원대학교 전자재료공학과) ;
  • 김시중 (수원대학교 전자재료공학과) ;
  • 김주연 (수원대학교 전자재료공학과) ;
  • 배규식 (수원대학교 전자재료공학과)
  • 발행 : 1999.11.01
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초록

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

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