SCT 박막의 상부전극 특성

Top Electrodes Properties of SCT Thin Films

  • 조춘남 (광운대학교 전기공학과) ;
  • 김진사 (광운대학교 전기공학과) ;
  • 전장배 (원광대학교 전자재료공학과) ;
  • 유영각 (충청대학교 전자공학과) ;
  • 김충혁 (광운대학교 전기공학과)
  • 발행 : 1999.11.01

초록

(Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

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