대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1999년도 하계학술대회 논문집 D
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- Pages.1931-1933
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- 1999
두께 변화에 따른 Gate Oxide의 전기적 특성
The Electrical Properties of Gate Oxide due to the Variation of Thickness
- Park, Jung-Goo (Dept. of Electrical Eng, Kwangwoon University) ;
- Hong, Nung-Pyo (Dept. of Electrical Eng, Kwangwoon University) ;
- Lee, Yong-Woo (Dept. of Electrical Eng, Taedok College) ;
- Kim, Wang-Gon (Dept. of Electrical Eng, Seoul National University of Technology) ;
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Hong, Jin-Woong
(Dept. of Electrical Eng, Kwangwoon University)
- 발행 : 1999.07.19
초록
In this paper, the current and voltage properties on the gate oxide film due to the variation of thickness are studied. The specimen is used for n-ch power MOSFET. It is shows the leakage current and current density characteristics due to the applied electric field when the oxide thickness is each
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