Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.07d
- /
- Pages.1931-1933
- /
- 1999
The Electrical Properties of Gate Oxide due to the Variation of Thickness
두께 변화에 따른 Gate Oxide의 전기적 특성
- Park, Jung-Goo (Dept. of Electrical Eng, Kwangwoon University) ;
- Hong, Nung-Pyo (Dept. of Electrical Eng, Kwangwoon University) ;
- Lee, Yong-Woo (Dept. of Electrical Eng, Taedok College) ;
- Kim, Wang-Gon (Dept. of Electrical Eng, Seoul National University of Technology) ;
- Hong, Jin-Woong (Dept. of Electrical Eng, Kwangwoon University)
- Published : 1999.07.19
Abstract
In this paper, the current and voltage properties on the gate oxide film due to the variation of thickness are studied. The specimen is used for n-ch power MOSFET. It is shows the leakage current and current density characteristics due to the applied electric field when the oxide thickness is each
Keywords