Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Hot Wire Chemical Vapor Deposition of Hydrogenated Microcrystalline Silicon Films

열선 CVD법에 의한 수소화된 미세결정 실리콘 박막 증착

  • Lee, Jeong-Chul (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kang, Ki-Whan (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Kim, Seok-Ki (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Song, Jin-Soo (Photovoltaic Research Team, Korea Institute of Energy Research) ;
  • Park, I-Jun (Photovoltaic Research Team, Korea Institute of Energy Research)
  • 이정철 (한국에너지기술연구소 태양광발전연구팀) ;
  • 강기환 (한국에너지기술연구소 태양광발전연구팀) ;
  • 김석기 (한국에너지기술연구소 태양광발전연구팀) ;
  • 윤경훈 (한국에너지기술연구소 태양광발전연구팀) ;
  • 송진수 (한국에너지기술연구소 태양광발전연구팀) ;
  • 박이준 (한국에너지기술연구소 태양광발전연구팀)
  • Published : 1999.07.19
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Abstract

This paper describes on the growth of a ${\mu}c$-Si:H film on low cost substrate like glass by Hot Wire CVD method. The ${\mu}c$-Si:H film, prepared in 50mTorr pressure, $1800^{\circ}C$ wire temperature, and $H_2/SiH_4$ 10 showed three clear peaks. (111), (220), and (311) in X-ray spectroscopy. The crystallite size and crystalline volume fraction, calculated from Raman spectroscopy, was about 6nm and 70%, respectively. The FTIR transmission spectra of the film showed a different absorption peak with a-Si:H film around $2000-2100cm^{-1}$.

Keywords