한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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- Pages.321-324
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- 1998
게이트 라인 물질의 저항률이 TFT-LCD 화소의 동작에 미치는 영향
Effects of Resistivity of Gate Line Material on TFT-LCD Pixel Operations
초록
Pixel-Design Array Simulation Tool(PDAST) was used to profoundly the gate signal distortion and pixel changing capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio, level-shift of the pixel voltage were simulated with varying the resis5tivity of the gate line material. The information obtained from this study could be utilized to design the larger area and finer image quality panel.
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