RF 마그네트론 스펴터링법에 의한 SCT 박막의 제초 및 특성

Fabrication and Properties of SGT thin film by RF Magnetron Sputtering Method

  • 김진사 (광운대학교 전기공학과) ;
  • 백봉현 (광운대학교 전기공학과) ;
  • 김충혁 (광운대학교 전기공학과) ;
  • 최운식 (대불대학교 전기전자공학부) ;
  • 박용필 (동신대학교 전기전자공학부) ;
  • 박건호 (청강문화산업대학 이동통신과) ;
  • 이준웅 (광운대학교 전기공학과)
  • 발행 : 1998.06.01

초록

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

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