Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.10a
- /
- Pages.637-640
- /
- 1998
Design of MMIC 2 Stage Power amplifiers for 35 ㎓
35 ㎓ MMIC 2단 전력 증폭기 설계
Abstract
A 35 ㎓ GaAs MMIC power amplifier was designed using a monolithic technology with AlGaAs/InGaAs/GaAs power PM-HEMTs, rectangualr spiral inductors and Si3N4 MIM capacitors. The GaAs power MESFETs in the input and output stages have total gate widths of 120 um and 320 um, respectively. Total S21 gain of 10.82dB and S11 of -16.26 dB were obtained from the designed MMIC power amplifier at 35 ㎓. And the chip size of the MMIC amplifier was 1.4
Keywords