Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1998.10a
- /
- Pages.633-636
- /
- 1998
Fabrication of AlGaAs/InGaAs/GaAs Pseudomorphic HEMT's for mm waves.
mm파 AlGaAs/InGaAs/GaAs Power PM-HEMT 제작 연구
Abstract
In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.
Keywords