대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 하계학술대회 논문집 G
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- Pages.2524-2526
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- 1998
p+ 실리콘의 강성계수 및 잔류응력 측정
A Measurement of the Residual Stress and Young's Modulus of p+ Silicon
- Kim, Sang-Cheol (Division of Electronics Engineering, Ajou University) ;
- Jeong, Ok-Chan (Division of Electronics Engineering, Ajou University) ;
- Yang, Sang-Sik (Division of Electronics Engineering, Ajou University)
- 발행 : 1998.07.20
초록
In this paper, the residual stress and young's modulus of the p+ thin film have been estimated by using the electrostatic resonators. The electrostatic plate resonator with four corrugated bridges and another with four flat ones have been fabricated. The deflection of the plate has been calculated under the induced tension and the residual stress and compared with the dynamic test results. When the young's modulus of the p+ silicon is 125 GPa. The estimated residual stresses of the flat and the corrugated bridges are about 15 MPa and less than 5 MPa, respectively. It has been confirmed that the corrugated structure releases the residual tensile stress resulted from the heavy boron diffusion process.
키워드