한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.253-259
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- 1997
Growth and Characterizations of Liquid-Phase-Epitaxial Fe doped GaAs
- Ko, Jung-Dae (Department of Physics, Cheju National University) ;
- Kim, Deuk-Young (Department of Semiconductor Science, Dongguk University) ;
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Kang, Tae-Won
(Department of Physics, Dongguk University)
- 발행 : 1997.06.01
초록
The iron doped GaAs single crystals were grown by liquid phase epitaxial method and its some physical properties were evaluated with a view to investigate the crystal quality and emission property. The isomer shift of 0.303mm/sec is calculated from low-temperature M ssbauer spectroscopy and we know that charge state of iron ion is 3+ in GaAs crystal. In low temperature photoluminescence, the deep emission bands with wide-line width have been observed at 0.99eV and 1.15eV in addition to sharp excitonic peaks. We attributed that these deep emissions are originated from substitutional Fe-acceptor which has charge state of 3+ and 2+, respectively.
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