한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.261-263
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- 1997
Characterization of 6H-SiC Single Crystals grown by Sublimation Method
- Kim, Hwa-Mok (Department of Ceramic Engineering, Hanyang University) ;
- Kang, Seung-Min (YoungDo Research Institute) ;
- Kyung Joo (YoungDo Research Institute) ;
- Auh, Keun-Ho (Department of Ceramic Engineering, Hanyang University)
- 발행 : 1997.06.01
초록
6H-SiC single crystals were successfully grown by the self-designed sublimation apparatus and the optimum growth condition was established. The grown SiC crystals were about 33mm in diameter and 10mm in length. Carrier concentration and doping type of undopped 6H-SiC wafer grown by sublimation method were 1016∼1017/㎤ and n-type Crystallinity of grown 6H-SiC wafer was better than of Acheson seed by data of Raman spectroscopy and Double Crystal XRD. We continue to characterize the grown 6H-SiC wafer in more detail and so we will grow the high-quality 6H-SiC single crystal wafer.
키워드