한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.247-251
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- 1997
Effect of Substrate on GaN Growth
- Kim, Yootaek (School of Electronic & Materials Engineering, Kyonggi University) ;
- Park, Chinho (School of Electronic & Materials Engineering, Kyonggi University)
- 발행 : 1997.06.01
초록
GaN films were grown on three differently oriented sapphire substates; (0001), (11-20), and (1-20). GaN films on the (0001) and (11-20) substates have a haxagonal structure and their growth rate was 0.6
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