한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)

한국결정성장학회 (The Korea Association of Crystal Growth)
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Enhanced Crystallization of Amorphous Silicon using Electric Field

  • Song, Kyung-Sub (Department of Inorganic Materials Engineering, Hanyang University) ;
  • Jun, Seung-Ik (Department of Inorganic Materials Engineering, Hanyang University) ;
  • Park, Sang-Hyun (Department of Inorganic Materials Engineering, Hanyang University) ;
  • Park, Duck-Kyun (Department of Inorganic Materials Engineering, Hanyang University)
  • 발행 : 1997.06.01
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초록

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.

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