한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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- Pages.231-236
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- 1997
Investigations of Pd Based hybrid ohmic contacts to high-low doped n-type GaAs
- Baik, Hong-Koo (School of Materials Science and Engineering, Yonsei University) ;
- Kwak, Joon-Seop (School of Materials Science and Engineering, Yonsei University)
- 발행 : 1997.06.01
초록
To improve electrical properties and uniformity of high-low doped n-type GaAs, new ohmic contacts with a low-resistance and the superior uniformity was developed using a concept of hybrid ohmic contact. The hybrid ohmic contact displayed good surface and interface morphology and had minimum contact resistivity of 3
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