다결정 실리콘 박막 트랜지스터에서의 수소화에 따른 전기적 스트레스의 영향

Effects of Electrical Stress on Hydrogen Passivated Polysilicon Thin Film Transistors

The effects of electrical stress in hydrogen passivated and as-fabricated poly-Si TFT's are investigated. It is observed that the charge trapping in the gate dielectric is the dominant degradation mechanism in poly-Si TFT's which has been stressed by the gate bias alone while the creation of defects in the poly-Si film is prevalent in gate and drain bias stressed devices. The degradation due to the gate bias stress is dramatically reduced with hydrogenation time while the degradation due to the gate and drain bias stress is increased a little. From the experimental results, it is considered that hydrogenation suppress the charge trapping at gate dielectrics as well as improve the characteristics of poly-Si TFT's.