Sol-Gel법으로 제조한 PLZT 박막의 전기광학특성

Electrooptic Properties of PLZT Thin Films Prepared by Sol-Gel Method

  • 이성갑 (서남대학교 전자공학과) ;
  • 정장호 (광운대학교 전자재료공학과) ;
  • 배선기 (시립 인천대학교 전기공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 1996.07.22

초록

In this study, $(Pb_{0.88}La_{0.12})(Zr_{0.40}Ti_{0.60})O_{2.97}$ (La/Zr/Ti=12/40/60) ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. PLZT stock solutions were made and spin-coated on the ITO-glass rubstrate at 4000[rpm] for 30[sec]. Coated specimens were baked to remove the organic materials at $400[^{\circ}C]$ for 10[min]. This procedure was repeated 5 times. The coated films were finally annealed at $450{\sim}700[^{\circ}C]$ for 1[hr]. The ferroelectric perovskite phases precipitated under the sintering of $550{\sim}700[^{\circ}C]$ for 1[hr]. Relative dielectric constant of the PLZT thin were increased with increasing the sintering temperature, the thin file sintered at $650[^{\circ}C]$ showed the highest value of 196. But in the PLZT thin film sintered at $700[^{\circ}C]$, relative dielectric constant was greatly decreased due to reacts between ITO electrode and glass substrate. In all thin films, the transmittance was more than 70[%] (at 632.8[nm]).

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