대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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$NH_3$ 및 $N_2$ 활성기 처리를 통한 Poly-SiliconTFT의 전기적 안정도에 관한 연구

Study on the Electrical Stability of poly-Si TFT through the Passivation Treatment with $NH_3$ or $N_2$ Precursors

  • Jun, J.H. (School of Electrical Engineering, Seoul National University) ;
  • Choi, H.S. (School of Electrical Engineering, Seoul National University) ;
  • Park, C.M. (School of Electrical Engineering, Seoul National University) ;
  • Choi, K.Y. (School of Electrical Engineering, Seoul National University) ;
  • Han, M.K. (School of Electrical Engineering, Seoul National University)
  • 발행 : 1996.07.22
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초록

Hydrogen passivation enhances the electrical characteristics of poly-Si TFT(Thin Film Transistor). However, the weak Si-H bonds, generated during hydrogenation, degrade the stability of the device. So, we carried out the passivation treatment with $NH_3$ or $N_2$. We compared the effect of $NH_3$ or $N_2$ passivation treatments with that of hydrogenation in terms of stability. Through the $NH_3$ passivation treatment, we obtained the most improved subthreshold swing of 1.2V/decade from the initial subthreshold swing of 1.56V/decade. When electrical stress was given, the $NH_3$ passivated devices showed best electrical stability.

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