대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1996년도 하계학술대회 논문집 C
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- Pages.1443-1445
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- 1996
$NH_3$ 및 $N_2$ 활성기 처리를 통한 Poly-SiliconTFT의 전기적 안정도에 관한 연구
Study on the Electrical Stability of poly-Si TFT through the Passivation Treatment with $NH_3$ or $N_2$ Precursors
- Jun, J.H. (School of Electrical Engineering, Seoul National University) ;
- Choi, H.S. (School of Electrical Engineering, Seoul National University) ;
- Park, C.M. (School of Electrical Engineering, Seoul National University) ;
- Choi, K.Y. (School of Electrical Engineering, Seoul National University) ;
- Han, M.K. (School of Electrical Engineering, Seoul National University)
- 발행 : 1996.07.22
초록
Hydrogen passivation enhances the electrical characteristics of poly-Si TFT(Thin Film Transistor). However, the weak Si-H bonds, generated during hydrogenation, degrade the stability of the device. So, we carried out the passivation treatment with
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