대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

XeCl EXCIMER-LASER 이용하여 열처리된 절연막의 특성 분석

Characteristics Of XeCl Excimer-Laser Annealed Insulator

  • 박철민 (서울 대학교 공과대학 전기공학부) ;
  • 유준석 (서울 대학교 공과대학 전기공학부) ;
  • 최홍석 (서울 대학교 공과대학 전기공학부) ;
  • 한민구 (서울 대학교 공과대학 전기공학부)
  • Park, C.M. (School of Electrical Engineering, Seoul National University) ;
  • Yoo, J.S. (School of Electrical Engineering, Seoul National University) ;
  • Choi, H.S. (School of Electrical Engineering, Seoul National University) ;
  • Han, M.K. (School of Electrical Engineering, Seoul National University)
  • 발행 : 1996.07.22
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초록

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

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