Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Effect of Electron Beam Irradiation for Volumn Resistivity in the Molding Compound for Power Semiconductor

전력용 반도체 몰딩재료의 체척고유저항에 미치는 전차선 조사의 영향

  • Lee, Yong-Woo (Dept. of Electrical Engineering, ChungNam College) ;
  • Hong, Nung-Pyo (Power Electronics, Micro Division, SamSung Electronics Co.) ;
  • Park, Woo-Hyun (Dept. of Electrical Engineering, KwangWoon University) ;
  • Ga, Chul-Hyun (Dept. of Electrical Engineering, KwangWoon University) ;
  • Lee, Soo-Won (Dept. of Electrical and Signal Engineering, National Railroad Junior College) ;
  • Hong, Jin-Woong (Dept. of Electrical Engineering, KwangWoon University)
  • 이용우 (충남전문대학 전기공학과) ;
  • 흥능표 (삼성전자 마이크로사업부 전력전자팀) ;
  • 박우현 (광운대학교 전기공학과) ;
  • 가출헌 (광운대학교 전기공학과) ;
  • 이수원 (철도전문대학 전기신호과) ;
  • 홍진웅 (광운대학교 전기공학과)
  • Published : 1995.11.18
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Abstract

This paper mainly, describes the electrical characteristics caused by the change of structure in solid state of specimen by electron beam irradiation of high temperature-low expension type molding materials of power semiconductor element. The experiments on physical properties and electrical characteristics for the specimen irradiated electron beam are carried ont. For the investigation on physical properties, XRD analysis is used. And for the experiment of electrical characteristics, measurement of volumn resistivity is used.

Keywords