Effects of the thin $SiO_2$ film on the formation of $TiN/TiSi_2$ bilayer formed by rapid thermal annealing

급속열처리에 의한 $TiN/TiSi_2$ 이중구조막 혈성에 대한 Ti-Si 계면의 얇은 산화막의 영향

The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.